The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both spin independent and spin-assisted charge transport of ferromagnets, including the newly reported MnxGe1−x ferromagnetic semiconductor. The computed Tcrossover below TC and carrier density in Ga1−xMnxAs system are 8-12 K and 1019 cm−3, remarkably identical with the experimental values of 10-12 K and 1018−1020 cm−3 respectively. The calculated charge carriers density for MnxGe1−x is 1019 cm−3, which is also in the same order with the experimental values.
@article{arxiv.cond-mat/0406030,
title = {Diagnosis of transport properties in Ferromagnets},
author = {Andrew Das Arulsamy},
journal= {arXiv preprint arXiv:cond-mat/0406030},
year = {2007}
}