Resistivity model for both paramagnetic and ferromagnetic phases

Andrew Das Arulsamy

Resistivity model for both paramagnetic and ferromagnetic phases

Strongly Correlated Electrons 2007-05-23 v5 Materials Science

Authors: Andrew Das Arulsamy

Abstract

The resistivity, $\rho$ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga $_{1-x}$ Mn $_x$ As system are 8-12 K and 10 $^{19}$ cm $^{-3}$ , remarkably identical with the experimental values of 10-12 K and 10 $^{18}-10^{20}$ cm $^{-3}$ respectively.

Keywords

magnetoresistance magnetization magnetic materials and spin systems

Cite

@article{arxiv.cond-mat/0402153,
  title  = {Resistivity model for both paramagnetic and ferromagnetic phases},
  author = {Andrew Das Arulsamy},
  journal= {arXiv preprint arXiv:cond-mat/0402153},
  year   = {2007}
}

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