High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

Nikoleta Theodoropoulou; Vinith Misra; John Philip; Patrick LeClair; Geetha P. Berera; Jagadeesh S. Moodera; Biswarup Satpati; Tapobrata Som

High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

Materials Science 2007-05-23 v1

Authors: Nikoleta Theodoropoulou , Vinith Misra , John Philip , Patrick LeClair , Geetha P. Berera , Jagadeesh S. Moodera , Biswarup Satpati , Tapobrata Som

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Abstract

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.

Keywords

ferromagnetism ZnMnO thin films diluted magnetic semiconductors spin polarization anomalous Hall effect

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@article{arxiv.cond-mat/0408294,
  title  = {High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films},
  author = {Nikoleta Theodoropoulou and Vinith Misra and John Philip and Patrick LeClair and Geetha P. Berera and Jagadeesh S. Moodera and Biswarup Satpati and Tapobrata Som},
  journal= {arXiv preprint arXiv:cond-mat/0408294},
  year   = {2007}
}

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15 pages, 4 figures

High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

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