Related papers: Spin injection across magnetic/non-magnetic interf…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
Using a density matrix formulation for the effective action, we obtain a set of macroscopic equations that describe spin accumulation in a non-homogeneous ferromagnet. We give a new expression for the spin current which extends previous…
Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…
A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor…
We study the effect of the ferromagnetic (FM) contacts on the spin accumulation in the lateral spin valve system for the collinear magnetization configurations. When an additional FM electrode is introduced in the all-metallic lateral…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
Semiconductor spintronics will need to control spin injection phenomena in the non-linear regime. In order to study these effects we have performed spin injection measurements from a dilute magnetic semiconductor [(Zn,Be,Mn)Se] into…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter…
We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials…
Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional…