Spin accumulation and decay in magnetic Schottky barriers
Mesoscale and Nanoscale Physics
2009-11-11 v1 Materials Science
Abstract
The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.
Keywords
Cite
@article{arxiv.cond-mat/0501726,
title = {Spin accumulation and decay in magnetic Schottky barriers},
author = {Gerrit E. W. Bauer and Yaroslav Tserkovnyak and Arne Brataas and Jun Ren and Ke Xia and Maciej Zwierzycki and Paul J. Kelly},
journal= {arXiv preprint arXiv:cond-mat/0501726},
year = {2009}
}