High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

M. Zenger; J. Moser; W. Wegscheider; D. Weiss; T. Dietl

doi:10.1063/1.1774255

High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

Mesoscale and Nanoscale Physics 2009-11-10 v1 Materials Science

Authors: M. Zenger , J. Moser , W. Wegscheider , D. Weiss , T. Dietl

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Abstract

We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier.

Keywords

magnetoresistance tunnel junction GaAs barrier tunneling magnetoresistance spin-flip scattering

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@article{arxiv.cond-mat/0404351,
  title  = {High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions},
  author = {M. Zenger and J. Moser and W. Wegscheider and D. Weiss and T. Dietl},
  journal= {arXiv preprint arXiv:cond-mat/0404351},
  year   = {2009}
}

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12 pages, 4 figures, submitted to Appl. Phys. Lett

High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

Abstract

Keywords

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