A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

H. Toyosaki; T. Fukumura; K. Ueno; M. Nakano; M. Kawasaki

doi:10.1143/JJAP.44.L896

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Materials Science 2009-11-11 v1

Authors: H. Toyosaki , T. Fukumura , K. Ueno , M. Nakano , M. Kawasaki

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Abstract

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

Keywords

ferromagnetic oxide semiconductor spin injection electrode magnetic tunnel junction tunneling magnetoresistance rutile TiO2

Cite

@article{arxiv.cond-mat/0507137,
  title  = {A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction},
  author = {H. Toyosaki and T. Fukumura and K. Ueno and M. Nakano and M. Kawasaki},
  journal= {arXiv preprint arXiv:cond-mat/0507137},
  year   = {2009}
}

Comments

9 pages, 4 figures

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