MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma; S. Ikeda; J. H. Park; H. Yamamoto; H. Gan; K. Miura; H. Hasegawa; J. Hayakawa; F. Matsukura; H. Ohno

doi:10.1063/1.3265740

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

Materials Science 2015-05-14 v1

Authors: K. Mizunuma , S. Ikeda , J. H. Park , H. Yamamoto , H. Gan , K. Miura , H. Hasegawa , J. Hayakawa , F. Matsukura , H. Ohno

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Abstract

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayer showed TMR ratio of 78% by post annealing at Ta =200 degree C.

Keywords

magnetic tunnel junctions MgO barrier perpendicular magnetic anisotropy CoFe/Pd multilayers tunnel magnetoresistance ferromagnetic insertion

Cite

@article{arxiv.0910.4204,
  title  = {MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers},
  author = {K. Mizunuma and S. Ikeda and J. H. Park and H. Yamamoto and H. Gan and K. Miura and H. Hasegawa and J. Hayakawa and F. Matsukura and H. Ohno},
  journal= {arXiv preprint arXiv:0910.4204},
  year   = {2015}
}

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12 pages, 4 figures

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

Abstract

Keywords

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