Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Zoë Kugler; Volker Drewello; Markus Schäfers; Jan Schmalhorst; Günter Reiss; Andy Thomas

doi:10.1016/j.jmmm.2010.08.038

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Materials Science 2015-05-19 v1

Authors: Zoë Kugler , Volker Drewello , Markus Schäfers , Jan Schmalhorst , Günter Reiss , Andy Thomas

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Abstract

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11 % at room temperature and 18.5 % at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

Keywords

magnetic tunnel junctions perpendicular magnetic anisotropy Co/Pd multilayers tunneling magnetoresistance temperature dependence bias voltage dependence MgO barrier

Cite

@article{arxiv.1008.0341,
  title  = {Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy},
  author = {Zoë Kugler and Volker Drewello and Markus Schäfers and Jan Schmalhorst and Günter Reiss and Andy Thomas},
  journal= {arXiv preprint arXiv:1008.0341},
  year   = {2015}
}

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Abstract

Keywords

Cite

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