High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Christian Sterwerf; Markus Meinert; Jan-Michael Schmalhorst; Günter Reiss

doi:10.1109/TMAG.2013.2238220

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Materials Science 2013-08-12 v1

Authors: Christian Sterwerf , Markus Meinert , Jan-Michael Schmalhorst , Günter Reiss

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Abstract

Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.

Keywords

magnetic tunnel junctions tunnel magnetoresistance Co2FeSi Fe2CoSi Heusler alloys atomic ordering spin pseudo gap

Cite

@article{arxiv.1308.2072,
  title  = {High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions},
  author = {Christian Sterwerf and Markus Meinert and Jan-Michael Schmalhorst and Günter Reiss},
  journal= {arXiv preprint arXiv:1308.2072},
  year   = {2013}
}

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