Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

Keisuke Masuda; Hiroyoshi Itoh; Yoshio Miura

doi:10.1103/PhysRevB.101.144404

Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

Materials Science 2020-04-08 v1 Mesoscale and Nanoscale Physics

Authors: Keisuke Masuda , Hiroyoshi Itoh , Yoshio Miura

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Abstract

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000 $\%$ , which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$ - $p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).

Keywords

magnetic tunnel junctions magnetoresistance

Cite

@article{arxiv.2004.03057,
  title  = {Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions},
  author = {Keisuke Masuda and Hiroyoshi Itoh and Yoshio Miura},
  journal= {arXiv preprint arXiv:2004.03057},
  year   = {2020}
}

Comments

5 pages, 5 figures, 1 table

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