Tunnel magnetoresistance and interfacial electronic state
Abstract
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model and the linear response theory. It is indicated that the TMR ratio is strongly reduced depending on the position of the -levels of impurities, based on reduction in the spin-dependent -electron tunneling in the majority spin state. The results are compared with experimental results for Cr-dusted ferromagnetic tunnel junctions, and also with results for metallic multilayers for which similar reduction in giant magnetoresistance has been reported.
Keywords
Cite
@article{arxiv.cond-mat/0203247,
title = {Tunnel magnetoresistance and interfacial electronic state},
author = {J. Inoue and H. Itoh},
journal= {arXiv preprint arXiv:cond-mat/0203247},
year = {2009}
}
Comments
5 pages, 4 figures, 2 column revtex4 format, ICMFS 2002 (Kyoto)