The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron dc sputtering using shadow mask techniques with AlO_{x} as a barrier and cobalt as counter electrode. Measurements of the magnetoresistive differential conductivity in a temperature range between 4K and 300K are shown. An analysis of the barrier properties applying the Simmons model to the bias dependent junction conductivity is performed. VSM measurements were carried out to examine the magnetic properties of the samples.
@article{arxiv.cond-mat/0407034,
title = {Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al},
author = {A. Conca and S. Falk and G. Jakob and M. Jourdan and H. Adrian},
journal= {arXiv preprint arXiv:cond-mat/0407034},
year = {2009}
}
Comments
3 pages, 3 figures submitted to JMMM (proceedings of JEMS04)