Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Pravin Khanal; Bowei Zhou; Magda Andrade; Christopher Mastrangelo; Ali Habiboglu; Arthur Enriquez; Daulton Fox; Kennedy Warrilow; Wei-Gang Wang

doi:10.1016/j.jmmm.2022.169914

Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Materials Science 2022-10-05 v1

Authors: Pravin Khanal , Bowei Zhou , Magda Andrade , Christopher Mastrangelo , Ali Habiboglu , Arthur Enriquez , Daulton Fox , Kennedy Warrilow , Wei-Gang Wang

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Abstract

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1V, which is substantially higher than that of MgO-based junctions.

Keywords

perpendicular magnetic tunnel junction MgAl2O4 barrier tunneling magnetoresistance perpendicular magnetic anisotropy reactive rf sputtering Vhalf

Cite

@article{arxiv.2208.09947,
  title  = {Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier},
  author = {Pravin Khanal and Bowei Zhou and Magda Andrade and Christopher Mastrangelo and Ali Habiboglu and Arthur Enriquez and Daulton Fox and Kennedy Warrilow and Wei-Gang Wang},
  journal= {arXiv preprint arXiv:2208.09947},
  year   = {2022}
}

Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Abstract

Keywords

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