Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions

A. Conca; M. Jourdan; H. Adrian

doi:10.1088/0022-3727/40/6/S03

Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions

Materials Science 2015-06-25 v1 Other Condensed Matter

Authors: A. Conca , M. Jourdan , H. Adrian

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Abstract

Epitaxial thin films of the theoretically predicted half metal Co2Cr0.6Fe0.4Al were deposited by dc magnetron sputtering on different substrates and buffer layers. The samples were characterized by x-ray and electron beam diffraction (RHEED) demonstrating the B2 order of the Heusler compound with only a small partition of disorder on the Co sites. Magnetic tunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counter electrode were prepared. From the Julliere model a spin polarisation of Co2Cr0.6Fe0.4Al of 54% at T=4K is deduced. The relation between the annealing temperature of the Heusler electrodes and the magnitude of the tunneling magnetoresistance effect was investigated and the results are discussed in the framework of morphology and surface order based of in situ STM and RHEED investigations.

Keywords

half-metallic Heusler alloy epitaxial thin films magnetic tunneling junctions spin polarization tunneling magnetoresistance dc magnetron sputtering

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@article{arxiv.cond-mat/0612022,
  title  = {Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions},
  author = {A. Conca and M. Jourdan and H. Adrian},
  journal= {arXiv preprint arXiv:cond-mat/0612022},
  year   = {2015}
}

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accepted by J. Phys. D: Appl. Phys

Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions

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