Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

J. Moser; A. Matos-Abiague; D. Schuh; W. Wegscheider; J. Fabian; D. Weiss

doi:10.1103/PhysRevLett.99.056601

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

Mesoscale and Nanoscale Physics 2009-11-11 v1 Materials Science

Authors: J. Moser , A. Matos-Abiague , D. Schuh , W. Wegscheider , J. Fabian , D. Weiss

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Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

Keywords

tunneling anisotropic magnetoresistance spin-orbit coupling tunnel junction Fe/GaAs/Au epitaxial

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@article{arxiv.cond-mat/0611406,
  title  = {Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions},
  author = {J. Moser and A. Matos-Abiague and D. Schuh and W. Wegscheider and J. Fabian and D. Weiss},
  journal= {arXiv preprint arXiv:cond-mat/0611406},
  year   = {2009}
}

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5 pages, 3 figures, submitted to Phys. Rev. Lett

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

Abstract

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