We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.
@article{arxiv.0904.3017,
title = {Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects},
author = {M. Wimmer and M. Lobenhofer and J. Moser and A. Matos-Abiague and D. Schuh and W. Wegscheider and J. Fabian and K. Richter and D. Weiss},
journal= {arXiv preprint arXiv:0904.3017},
year = {2009}
}