Spin injection and detection by resonant tunneling structure
Mesoscale and Nanoscale Physics
2007-05-23 v1 Materials Science
Abstract
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
Cite
@article{arxiv.cond-mat/0406191,
title = {Spin injection and detection by resonant tunneling structure},
author = {M. M. Glazov and S. A. Tarasenko and P. S. Alekseev and M. A. Odnoblyudov and V. M. Chistyakov and I. N. Yassievich},
journal= {arXiv preprint arXiv:cond-mat/0406191},
year = {2007}
}
Comments
Proc. 12th Int. Symp. "Nanostructures: Physics and Technology" (June 2004, St. Petersburg, Russia), 3 pages