A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.
@article{arxiv.0705.1123,
title = {Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode},
author = {Z. L. Fang and P. Wu and N. Kundtz and A. M. Chang and X. Y. Liu and J. K. Furdyna},
journal= {arXiv preprint arXiv:0705.1123},
year = {2009}
}
Comments
3 pages with 3 pictures, submitted to Appl. Phys. Lett