We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.
Cite
@article{arxiv.cond-mat/0703574,
title = {Resonant tunneling diode with spin polarized injector},
author = {A. Slobodskyy and C. Gould and T. Slobodskyy and G. Schmidt and L. W. Molenkamp and D. Sanchez},
journal= {arXiv preprint arXiv:cond-mat/0703574},
year = {2007}
}