English

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

Mesoscale and Nanoscale Physics 2011-04-06 v1

Abstract

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.

Keywords

Cite

@article{arxiv.1104.0854,
  title  = {Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs},
  author = {Ya. V. Terent'ev and C. Zoth and V. V. Bel'kov and P. Olbrich and C. Drexler and V. Lechner and P. Lutz and A. N. Semenov and V. A. Solov'ev and I. V. Sedova and G. V. Klimko and T. A. Komissarova and S. V. Ivanov and S. D. Ganichev},
  journal= {arXiv preprint arXiv:1104.0854},
  year   = {2011}
}

Comments

4 pages and 3 figures