Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

T. Slobodskyy; C. Rüster; R. Fiederling; D. Keller; C. Gould; W. Ossau; G. Schmidt; L. W. Molenkamp

doi:10.1063/1.1841456

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

Materials Science 2016-08-16 v1

Authors: T. Slobodskyy , C. Rüster , R. Fiederling , D. Keller , C. Gould , W. Ossau , G. Schmidt , L. W. Molenkamp

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Abstract

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

Keywords

molecular-beam epitaxy diluted magnetic semiconductor (Zn,Mn)Se Si(100) substrate giant Zeeman splitting photoluminescence low-temperature epitaxy

Cite

@article{arxiv.cond-mat/0410540,
  title  = {Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)},
  author = {T. Slobodskyy and C. Rüster and R. Fiederling and D. Keller and C. Gould and W. Ossau and G. Schmidt and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:cond-mat/0410540},
  year   = {2016}
}

Comments

To be published in Applied Physics Letters

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