Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures

Yuanfeng Ding; Huanhuan Song; Junwei Huang; Jinshan Yao; Yu Gu; Lian Wei; Yu Deng; Hongtao Yuan; Hong Lu; Yan-Feng Chen

Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures

Materials Science 2020-09-29 v1

Authors: Yuanfeng Ding , Huanhuan Song , Junwei Huang , Jinshan Yao , Yu Gu , Lian Wei , Yu Deng , Hongtao Yuan , Hong Lu , Yan-Feng Chen

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Abstract

In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {\alpha}-Sn films on the electrical transport properties.

Keywords

alpha-sn film insb substrate molecular beam epitaxy magnetoresistance heterostructure electrical transport

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@article{arxiv.2009.13427,
  title  = {Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures},
  author = {Yuanfeng Ding and Huanhuan Song and Junwei Huang and Jinshan Yao and Yu Gu and Lian Wei and Yu Deng and Hongtao Yuan and Hong Lu and Yan-Feng Chen},
  journal= {arXiv preprint arXiv:2009.13427},
  year   = {2020}
}

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24 pages, 5 figures

Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures

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