Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Y. Hung Liu; C. Wei Chong; W. Chuan Chen; J. C. A. Huang; C. -Maw Cheng; K. -Ding Tsuei; Z. Li; H. Qiu; V. V. Marchenkov

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Mesoscale and Nanoscale Physics 2016-11-28 v1

Authors: Y. Hung Liu , C. Wei Chong , W. Chuan Chen , J. C. A. Huang , C. -Maw Cheng , K. -Ding Tsuei , Z. Li , H. Qiu , V. V. Marchenkov

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Abstract

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.

Keywords

topological insulator surface state molecular beam epitaxy (Bi,Sb)2Se3 angle-resolved photoemission spectroscopy transport properties metal-insulator transition

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@article{arxiv.1611.08395,
  title  = {Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3},
  author = {Y. Hung Liu and C. Wei Chong and W. Chuan Chen and J. C. A. Huang and C. -Maw Cheng and K. -Ding Tsuei and Z. Li and H. Qiu and V. V. Marchenkov},
  journal= {arXiv preprint arXiv:1611.08395},
  year   = {2016}
}

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Abstract

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