Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

Hiroshi Takatsu; Naoya Yamashina; Daisuke Shiga; Ryu Yukawa; Koji Horiba; Hiroshi Kumigashira; Takahito Terashima; Hiroshi Kageyama

doi:10.1016/j.jcrysgro.2020.125685

Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

Materials Science 2020-12-07 v1 Strongly Correlated Electrons

Authors: Hiroshi Takatsu , Naoya Yamashina , Daisuke Shiga , Ryu Yukawa , Koji Horiba , Hiroshi Kumigashira , Takahito Terashima , Hiroshi Kageyama

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Abstract

SrMoO $_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO $_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO $_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO $_3$ or KTaO $_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO $_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.

Keywords

SrMoO3 molecular beam epitaxy conductive oxide epitaxial film SrTiO3 buffer layer angle-resolved photoemission spectroscopy

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@article{arxiv.2012.02425,
  title  = {Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$},
  author = {Hiroshi Takatsu and Naoya Yamashina and Daisuke Shiga and Ryu Yukawa and Koji Horiba and Hiroshi Kumigashira and Takahito Terashima and Hiroshi Kageyama},
  journal= {arXiv preprint arXiv:2012.02425},
  year   = {2020}
}

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6 pages, 5 figures

Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

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