Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Adam Ahmed; Hua Wen; Taisuke Ohta; Igor Pinchuk; Tiancong Zhu; Thomas Beechem; Roland Kawakami

doi:10.1016/j.jcrysgro.2016.04.057

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Materials Science 2016-06-22 v1 Mesoscale and Nanoscale Physics

Authors: Adam Ahmed , Hua Wen , Taisuke Ohta , Igor Pinchuk , Tiancong Zhu , Thomas Beechem , Roland Kawakami

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Abstract

We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 {\AA}. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Keywords

molecular beam epitaxy sro buffer layer graphite graphene complex oxide integration srtio3

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@article{arxiv.1511.06496,
  title  = {Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides},
  author = {Adam Ahmed and Hua Wen and Taisuke Ohta and Igor Pinchuk and Tiancong Zhu and Thomas Beechem and Roland Kawakami},
  journal= {arXiv preprint arXiv:1511.06496},
  year   = {2016}
}

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23 pages, 8 figures

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Abstract

Keywords

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