An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

T. W. Zhang; Z. W. Mao; Z. B. Gu; Y. F. Nie; X. Q. Pan

doi:10.1063/1.4990663

An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

Materials Science 2017-08-02 v1

Authors: T. W. Zhang , Z. W. Mao , Z. B. Gu , Y. F. Nie , X. Q. Pan

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Abstract

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.

Keywords

molecular beam epitaxy complex oxide films growth calibration RHEED transition metal oxide heterostructures

Cite

@article{arxiv.1706.05797,
  title  = {An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy},
  author = {T. W. Zhang and Z. W. Mao and Z. B. Gu and Y. F. Nie and X. Q. Pan},
  journal= {arXiv preprint arXiv:1706.05797},
  year   = {2017}
}

Comments

4 pages, 3 figures

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