Defect-free ZnSe nanowire and nano-needle nanostructures

Thomas Aichele; Adrien Tribu; Catherine Bougerol; Kuntheak Kheng; Regis Andre; Serge Tatarenko

doi:10.1063/1.2991298

Defect-free ZnSe nanowire and nano-needle nanostructures

Materials Science 2009-11-13 v2

Authors: Thomas Aichele , Adrien Tribu , Catherine Bougerol , Kuntheak Kheng , Regis Andre , Serge Tatarenko

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Abstract

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.

Keywords

semiconductor nanowire growth

Cite

@article{arxiv.0805.1818,
  title  = {Defect-free ZnSe nanowire and nano-needle nanostructures},
  author = {Thomas Aichele and Adrien Tribu and Catherine Bougerol and Kuntheak Kheng and Regis Andre and Serge Tatarenko},
  journal= {arXiv preprint arXiv:0805.1818},
  year   = {2009}
}

Comments

4 pages, 4 figures

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