ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 μm in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source.
@article{arxiv.0809.2946,
title = {CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K},
author = {Thomas Aichele and Adrien Tribu and Gregory Sallen and Juanita Bocquel and Edith Bellet-Amalric and Catherine Bougerol and Jean-Philippe Poizat and Kuntheak Kheng and Régis André and Serge Tatarenko},
journal= {arXiv preprint arXiv:0809.2946},
year = {2009}
}