III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.
@article{arxiv.2411.03185,
title = {Single photon emitters in thin GaAsN nanowire tubes grown on Si},
author = {Nadine Denis and Didem Dede and Timur Nurmamytov and Salvatore Cianci and Francesca Santangeli and Marco Felici and Victor Boureau and Antonio Polimeni and Silvia Rubini and Anna Fontcuberta i Morral and Marta De Luca},
journal= {arXiv preprint arXiv:2411.03185},
year = {2025}
}