GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scalable quantum photonics. However, ultrathin axial quantum-emitter formation is often hindered by facet-dependent growth dynamics and rotational twins, which induce lateral overgrowth and compromise interface abruptness. Here, we develop InGaAs-based quantum emitters by tailoring facet evolution via dilute Sb incorporation, which efficiently suppresses twins and promotes confined axial insertion at the growth-front facet. This approach significantly enhances the probability of obtaining abrupt, few-nanometer-thin quantum dots at the nanowire tip. Single-nanowire optical spectroscopy reveals intense, spatially localized emission from the active region with lifetimes as short as (0.51 ± 0.02) ns, and second-order photon-correlation measurements consistently exhibit pronounced antibunching with g(2)(0)<0.4, confirming single-photon emission. These results establish a strong correlation between twin density and axial heterostructure formation, identifying defect control as a key factor in realizing monolithically integrated nanowire single-photon sources.
@article{arxiv.2605.13992,
title = {Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering},
author = {Hyowon W. Jeong and Aris Koulas-Simos and Imad Limame and Markus Döblinger and Sang Kyu Kim and Chirag C. Palekar and Jonathan J. Finley and Stephan Reitzenstein and Gregor Koblmüller},
journal= {arXiv preprint arXiv:2605.13992},
year = {2026}
}