Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface (<10nm) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to ∼16×, an effect accompanied by an up to 3.4× Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to ∼85%. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers.
@article{arxiv.1603.07093,
title = {Monolithically integrated single quantum dots coupled to bowtie nanoantennas},
author = {A. A. Lyamkina and K. Schraml and A. Regler and M. Schalk and A. K. Bakarov and A. I. Toropov and S. P. Moshchenko and M. Kaniber},
journal= {arXiv preprint arXiv:1603.07093},
year = {2017}
}