Self-directed growth of AlGaAs core-shell nanowires for visible light applications

C. Chen; S. Shehata; C. Fradin; R. LaPierre; C. Couteau; G. Weihs

doi:10.1021/nl070874k

Self-directed growth of AlGaAs core-shell nanowires for visible light applications

Materials Science 2007-10-03 v1

Authors: C. Chen , S. Shehata , C. Fradin , R. LaPierre , C. Couteau , G. Weihs

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Abstract

Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.

Keywords

AlGaAs nanowires core-shell structure molecular beam epitaxy self-directed growth carrier confinement visible light applications

Cite

@article{arxiv.0710.0518,
  title  = {Self-directed growth of AlGaAs core-shell nanowires for visible light applications},
  author = {C. Chen and S. Shehata and C. Fradin and R. LaPierre and C. Couteau and G. Weihs},
  journal= {arXiv preprint arXiv:0710.0518},
  year   = {2007}
}

Comments

20 pages, 7 figures

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