English

Multiple Quantum Well AlGaAs Nanowires

Materials Science 2008-03-07 v1
Authors: C. Chen , N. Braidy , C. Couteau , C. Fradin , G. Weihs , R. LaPierre
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Abstract

This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to non-segmented NWs due to carrier confinement and sidewall passivation.

Keywords

quantum wells semiconductor nanowire growth quantum dots

Cite

@article{arxiv.0803.0881,
  title  = {Multiple Quantum Well AlGaAs Nanowires},
  author = {C. Chen and N. Braidy and C. Couteau and C. Fradin and G. Weihs and R. LaPierre},
  journal= {arXiv preprint arXiv:0803.0881},
  year   = {2008}
}

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