Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

J. C. Gonz'alez; A. Malachias; J. C. de Sousa; R-Ribeiro Andrade; M. V. B. Moreira; A. G. de Oliveira

Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Materials Science 2008-05-14 v2

Authors: J. C. Gonz'alez , A. Malachias , J. C. de Sousa , R-Ribeiro Andrade , M. V. B. Moreira , A. G. de Oliveira

Abstract

We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In $_{0.86}$ Ga $_{0.14}$ As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.

Keywords

Ga interdiffusion InAs nanowires molecular beam epitaxy diffusion-induced growth X-ray diffraction III-V nanowires heteroepitaxy

Cite

@article{arxiv.0803.1951,
  title  = {Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires},
  author = {J. C. Gonz'alez and A. Malachias and J. C. de Sousa and R-Ribeiro Andrade and M. V. B. Moreira and A. G. de Oliveira},
  journal= {arXiv preprint arXiv:0803.1951},
  year   = {2008}
}

Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Abstract

Keywords

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