The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Zhongyunshen Zhu; Yuxin Song; Zhenpu Zhang; Hao Sun; Yi Han; Yaoyao Li; Liyao Zhang; Zhongying Xue; Zengfeng Di; Shumin Wang

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Applied Physics 2017-06-07 v1

Authors: Zhongyunshen Zhu , Yuxin Song , Zhenpu Zhang , Hao Sun , Yi Han , Yaoyao Li , Liyao Zhang , Zhongying Xue , Zengfeng Di , Shumin Wang

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Abstract

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Three growth orientations were observed on Ge (110) by the VSS growth at 220 {\deg}C, differing from only one growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained via analyzing the mechanism of the two growth modes.

Keywords

Ge nanowires vapor-solid-solid growth molecular beam epitaxy vapor-liquid-solid growth Au-assisted growth

Cite

@article{arxiv.1706.01605,
  title  = {The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy},
  author = {Zhongyunshen Zhu and Yuxin Song and Zhenpu Zhang and Hao Sun and Yi Han and Yaoyao Li and Liyao Zhang and Zhongying Xue and Zengfeng Di and Shumin Wang},
  journal= {arXiv preprint arXiv:1706.01605},
  year   = {2017}
}

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11 pages, 5 figures, article

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

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