N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation.
@article{arxiv.2104.04218,
title = {A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy},
author = {Marta Orrù and Eva Repiso and Stefania Carapezzi and Alex Henning and Stefano Roddaro and Alfonso Franciosi and Yossi Rosenwaks and Anna Cavallini and Faustino Martelli and Silvia Rubini},
journal= {arXiv preprint arXiv:2104.04218},
year = {2021}
}