We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about 1×10−5 while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is stronger affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.
@article{arxiv.1709.09731,
title = {Influence of Te-doping on self-catalyzed VS InAs nanowires},
author = {Nicholas A. Güsken and Torsten Rieger and Gregor Mussler and Mihail Ion Lepsa and Detlev Grützmacher},
journal= {arXiv preprint arXiv:1709.09731},
year = {2020}
}