Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Alberto Casadei; Peter Krogstrup; Martin Heiss; Jason A. Röhr; Carlo Colombo; Thibaud Ruelle; Shivendra Upadhyay; Claus B. Sørensen; Jesper Nygård; Anna Fontcuberta i Morral

doi:10.1063/1.4772020

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Materials Science 2013-06-14 v1

Authors: Alberto Casadei , Peter Krogstrup , Martin Heiss , Jason A. Röhr , Carlo Colombo , Thibaud Ruelle , Shivendra Upadhyay , Claus B. Sørensen , Jesper Nygård , Anna Fontcuberta i Morral

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Abstract

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.

Keywords

GaAs nanowires Be doping incorporation paths molecular beam epitaxy Ga-assisted method diffusion catalyst-free

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@article{arxiv.1210.1670,
  title  = {Doping incorporation paths in catalyst-free Be-doped GaAs nanowires},
  author = {Alberto Casadei and Peter Krogstrup and Martin Heiss and Jason A. Röhr and Carlo Colombo and Thibaud Ruelle and Shivendra Upadhyay and Claus B. Sørensen and Jesper Nygård and Anna Fontcuberta i Morral},
  journal= {arXiv preprint arXiv:1210.1670},
  year   = {2013}
}

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4 pages, 4 figures

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

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