English

Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

Materials Science 2012-08-01 v1

Abstract

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.

Keywords

Cite

@article{arxiv.1207.7135,
  title  = {Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis},
  author = {Martien Den Hertog and Miryam Elouneg-Jamroz and Edith Bellet-Amalric and Samir Bounouar and Catherine Bougerol and Régis André and Yann Genuist and Jean Philippe Poizat and Kuntheak Kheng and Serge Tatarenko},
  journal= {arXiv preprint arXiv:1207.7135},
  year   = {2012}
}