MBE Growth of Cubic InN

J. Schoermann; D. J. As; K. Lischka

MBE Growth of Cubic InN

Materials Science 2007-05-23 v1

Authors: J. Schoermann , D. J. As , K. Lischka

Abstract

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.

Keywords

MBE growth cubic InN X-ray diffraction band gap zinc blende structure

Cite

@article{arxiv.cond-mat/0702140,
  title  = {MBE Growth of Cubic InN},
  author = {J. Schoermann and D. J. As and K. Lischka},
  journal= {arXiv preprint arXiv:cond-mat/0702140},
  year   = {2007}
}

Comments

3 pages with 3 figures; MRS Symposium, Fall Meeting 2006

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