MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

B. J. Kowalski; I. A. Kowalik; R. J. Iwanowski; E. Lusakowska; M. Sawicki; J. Sadowski; I. Grzegory; S. Porowski

MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

Materials Science 2007-05-23 v2

Authors: B. J. Kowalski , I. A. Kowalik , R. J. Iwanowski , E. Lusakowska , M. Sawicki , J. Sadowski , I. Grzegory , S. Porowski

View on arXiv ↗ PDF ↗

Abstract

Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.

Keywords

MnAs overlayer GaN(0001) MBE growth photoemission spectroscopy electronic structure

Cite

@article{arxiv.cond-mat/0408111,
  title  = {MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure},
  author = {B. J. Kowalski and I. A. Kowalik and R. J. Iwanowski and E. Lusakowska and M. Sawicki and J. Sadowski and I. Grzegory and S. Porowski},
  journal= {arXiv preprint arXiv:cond-mat/0408111},
  year   = {2007}
}

Comments

11 pages, 3 figures

Related papers

View all related →