Substrate temperature changes during MBE growth of GaMnAs

V. Novak; K. Olejnik; M. Cukr; L. Smrcka; Z. Remes; J. Oswald

doi:10.1063/1.2800798

Substrate temperature changes during MBE growth of GaMnAs

Materials Science 2009-11-13 v1 Other Condensed Matter

Authors: V. Novak , K. Olejnik , M. Cukr , L. Smrcka , Z. Remes , J. Oswald

Journal reference: J.Appl.Phys. 102, 083536 (2007)

Comments: 5 pages, 5 figures Submitted to Journal of Applied Physics

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Abstract

Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation damping are discussed.

Keywords

semiconductor nanowire growth thermal properties of materials

Cite

@article{arxiv.0704.2485,
  title  = {Substrate temperature changes during MBE growth of GaMnAs},
  author = {V. Novak and K. Olejnik and M. Cukr and L. Smrcka and Z. Remes and J. Oswald},
  journal= {arXiv preprint arXiv:0704.2485},
  year   = {2009}
}

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