Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu; S. W. Liu; M. Xiao; P. M. Thibado

doi:10.1016/j.jcrysgro.2006.11.049

Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

Mesoscale and Nanoscale Physics 2015-06-24 v1

Authors: J. F. Xu , S. W. Liu , M. Xiao , P. M. Thibado

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Abstract

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the samples grown at a low substrate temperature are greater than those in the samples grown at a high substrate temperature. The PL spectra show a GaAs exciton peak, a peak involving a carbon acceptor, a substitutional Mn acceptor-related peak and an optical phonon-related peak.

Keywords

GaMnAs/GaAs thin films molecular beam epitaxy Hall effect photoluminescence carrier concentration excitonic peak Mn acceptor

Cite

@article{arxiv.1503.02686,
  title  = {Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy},
  author = {J. F. Xu and S. W. Liu and M. Xiao and P. M. Thibado},
  journal= {arXiv preprint arXiv:1503.02686},
  year   = {2015}
}

Comments

7 pages, 3 figures

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