GaMnAs: layers, wires and dots

Janusz Sadowski

GaMnAs: layers, wires and dots

Materials Science 2008-08-22 v1

Authors: Janusz Sadowski

Abstract

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires

Keywords

semiconductor nanowire growth

Cite

@article{arxiv.0808.2887,
  title  = {GaMnAs: layers, wires and dots},
  author = {Janusz Sadowski},
  journal= {arXiv preprint arXiv:0808.2887},
  year   = {2008}
}

Comments

15 pages, 14 figures. To be published in Proc. XXXVII International School on the Physics of Semiconducting Compounds "Jaszowiec 2008", June 2008, Poland

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