Related papers: GaMnAs: layers, wires and dots
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the…
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5…
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs…
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While…
We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single…
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition…
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion…
Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth.…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the…
We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth…