High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

J. Sadowski; J. Z. Domagala; V. Osinniy; J. Kanski; M. Adell; L. Ilver; C. Hernandez; F. Terki; S. Charar; D. Maude

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Materials Science 2007-05-23 v2

Authors: J. Sadowski , J. Z. Domagala , V. Osinniy , J. Kanski , M. Adell , L. Ilver , C. Hernandez , F. Terki , S. Charar , D. Maude

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Abstract

Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume.

Keywords

GaMnAs ferromagnetic phase transition annealing arsenic capping Mn interstitials

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@article{arxiv.cond-mat/0601623,
  title  = {High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping},
  author = {J. Sadowski and J. Z. Domagala and V. Osinniy and J. Kanski and M. Adell and L. Ilver and C. Hernandez and F. Terki and S. Charar and D. Maude},
  journal= {arXiv preprint arXiv:cond-mat/0601623},
  year   = {2007}
}

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17 pages including 6 figures

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

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