Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

A. Casiraghi; A. W. Rushforth; M. Wang; N. R. S Farley; P. Wadley; J. L. Hall; C. R. Staddon; K. W. Edmonds; R. P. Campion; C. T. Foxon; B. L. Gallagher

doi:10.1063/1.3491841

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

Materials Science 2015-05-19 v1

Authors: A. Casiraghi , A. W. Rushforth , M. Wang , N. R. S Farley , P. Wadley , J. L. Hall , C. R. Staddon , K. W. Edmonds , R. P. Campion , C. T. Foxon , B. L. Gallagher

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Abstract

We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.

Keywords

perpendicular magnetic anisotropy (Ga,Mn)(As,P) thermal annealing molecular beam epitaxy carrier density

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@article{arxiv.1006.2644,
  title  = {Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing},
  author = {A. Casiraghi and A. W. Rushforth and M. Wang and N. R. S Farley and P. Wadley and J. L. Hall and C. R. Staddon and K. W. Edmonds and R. P. Campion and C. T. Foxon and B. L. Gallagher},
  journal= {arXiv preprint arXiv:1006.2644},
  year   = {2015}
}

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13 pages, 3 figures, submitted to Applied Physics Letters

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

Abstract

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