Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers

M. Cubukcu; H. J. von Bardeleben; Kh. Khazen; J. L. Cantin; O. Mauguin; L. Largeau; A. Lemaitre

Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers

Materials Science 2009-08-10 v2 Mesoscale and Nanoscale Physics

Authors: M. Cubukcu , H. J. von Bardeleben , Kh. Khazen , J. L. Cantin , O. Mauguin , L. Largeau , A. Lemaitre

Abstract

Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn doping level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.

Keywords

phosphorous alloying magnetic anisotropy ferromagnetic (Ga,Mn)(As,P) layers GaMnAs thin films easy axes critical temperature

Cite

@article{arxiv.0908.0063,
  title  = {Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers},
  author = {M. Cubukcu and H. J. von Bardeleben and Kh. Khazen and J. L. Cantin and O. Mauguin and L. Largeau and A. Lemaitre},
  journal= {arXiv preprint arXiv:0908.0063},
  year   = {2009}
}

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14 pages, 3 figures

Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers

Abstract

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