Achieving High Curie Temperature in (Ga,Mn)As

M Wang; R P Campion; A W Rushforth; K W Edmonds; C T Foxon; B L Gallagher

doi:10.1063/1.2992200

Achieving High Curie Temperature in (Ga,Mn)As

Materials Science 2009-11-13 v1

Authors: M Wang , R P Campion , A W Rushforth , K W Edmonds , C T Foxon , B L Gallagher

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Abstract

We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the 2D-3D phase boundary. The increase in Tc, due to the removal of interstitial Mn by post growth annealing, is counteracted by a second process which reduces Tc and which is more effective at higher annealing temperatures. Our results show that it is necessary to optimize the growth parameters and post growth annealing procedure to obtain the highest Tc.

Keywords

semiconductor nanowire growth thermal properties of materials crystal growth and phase transitions

Cite

@article{arxiv.0808.1464,
  title  = {Achieving High Curie Temperature in (Ga,Mn)As},
  author = {M Wang and R P Campion and A W Rushforth and K W Edmonds and C T Foxon and B L Gallagher},
  journal= {arXiv preprint arXiv:0808.1464},
  year   = {2009}
}

Achieving High Curie Temperature in (Ga,Mn)As

Abstract

Keywords

Cite

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